Microfabrication of a mechanically controllable break junction in silicon

نویسندگان

  • C. Zhou
  • C. J. Muller
  • M. R. Deshpande
چکیده

We present a detailed description of the fabrication and operation at room temperature of a novel type of tunnel displacement transducer. Instead of a feedback system it relies on a large reduction factor assuring an inherently stable device. Stability measurements in the tunnel regime infer an electrode stability within 3 pm in a 1 kHz bandwidth. In the contact regime the conductance takes on a discrete number of values when the constriction is reduced atom by atom. This reflects the conduction through discrete channels. © 1995 American Institute of Physics.

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تاریخ انتشار 1996